Effect of turbostratic boron nitride buffer layers on stress evolution of cubic boron nitride films

Authors
Kim, HSBaik, YJ
Issue Date
2004-04-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.95, no.7, pp.3473 - 3476
Abstract
Cubic boron nitride (cBN) films are deposited on the BN buffer layers with aligned or random orientation of turbostratic BN (tBN) laminates. It is clearly shown that the cBN phase nucleates and grows on the buffer layer regardless of its alignment, but the lattice relationship between the tBN and the cBN phases and the behavior of the residual stress variation are different according to the tBN buffer type. Based on these results, the validity of the residual stress and tBN alignment hypothesis for cBN nucleation is hereby discussed. (C) 2004 American Institute of Physics.
Keywords
THIN-FILMS; DEPOSITION; IONS; THIN-FILMS; DEPOSITION; IONS
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/137677
DOI
10.1063/1.1651334
Appears in Collections:
KIST Article > 2004
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE