Effect of thermal annealing on the surface and the microstructural properties of ZnO thin films grown on p-Si (100) substrates

Authors
Kim, TWLee, KHLee, HSLee, JYKang, SGKim, DWCho, WJ
Issue Date
2004-02-15
Publisher
ELSEVIER
Citation
JOURNAL OF CRYSTAL GROWTH, v.262, no.1-4, pp.72 - 77
Abstract
The annealing effect on the surface and the microstructural properties of ZnO thin films grown on p-Si (100) substrates by radio-frequency magnetron sputtering have been investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), and transmission electron microscopy (TEM) measurements. The AFM images and the XRD patterns showed that the crystallinity of the annealed ZnO films was enhanced by annealing in comparison with that of the as-grown ZnO films, and XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si (100) substrates had a c-axis preferential orientation in the [0001] crystal direction. These results indicate that the surface and the microstructural qualities of the ZnO films grown on p-Si (100) substrates are improved by thermal treatment. (C) 2003 Elsevier B.V. All rights reserved.
Keywords
transmission electron microscopy; radio frequency magnetron sputtering; ZnO
ISSN
0022-0248
URI
https://pubs.kist.re.kr/handle/201004/137850
DOI
10.1016/j.jcrysgro.2003.10.076
Appears in Collections:
KIST Article > 2004
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