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dc.contributor.authorHam, MH-
dc.contributor.authorJeong, MC-
dc.contributor.authorLee, WY-
dc.contributor.authorMyoung, JM-
dc.contributor.authorLee, JM-
dc.contributor.authorChang, JY-
dc.contributor.authorHan, SH-
dc.date.accessioned2024-01-21T07:38:28Z-
dc.date.available2024-01-21T07:38:28Z-
dc.date.created2021-09-02-
dc.date.issued2004-02-
dc.identifier.issn0361-5235-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137911-
dc.description.abstractWe present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectMOLECULAR-BEAM-EPITAXY-
dc.subjectFERROMAGNETIC SEMICONDUCTOR-
dc.subjectROOM-TEMPERATURE-
dc.titleMagnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films-
dc.typeArticle-
dc.identifier.doi10.1007/s11664-004-0279-3-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.33, no.2, pp.114 - 117-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume33-
dc.citation.number2-
dc.citation.startPage114-
dc.citation.endPage117-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000189077800005-
dc.identifier.scopusid2-s2.0-1542318944-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM-EPITAXY-
dc.subject.keywordPlusFERROMAGNETIC SEMICONDUCTOR-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordAuthor(Ga,Mn)N-
dc.subject.keywordAuthordiluted magnetic semiconductor-
dc.subject.keywordAuthorplasma-enhanced molecular beam epitaxy (PEMBE)-
dc.subject.keywordAuthorferromagnetism-
dc.subject.keywordAuthormagnetotransport-
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