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dc.contributor.authorSon, JH-
dc.contributor.authorKim, HB-
dc.contributor.authorWhang, CN-
dc.contributor.authorSung, MC-
dc.contributor.authorJeong, K-
dc.contributor.authorIm, S-
dc.contributor.authorChae, KH-
dc.date.accessioned2024-01-21T07:38:31Z-
dc.date.available2024-01-21T07:38:31Z-
dc.date.created2021-09-02-
dc.date.issued2004-02-
dc.identifier.issn0168-583X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137912-
dc.description.abstractThe SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5 x 10(16) ions/cm(2) of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO2/Si (3 nm)/SiO2 layer will be discussed. (C) 2003 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectIMPLANTED SIO2-
dc.subjectLUMINESCENCE-
dc.subjectTEMPERATURE-
dc.titleVisible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation-
dc.typeArticle-
dc.identifier.doi10.1016/j.nimb.2003.11.059-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.216, pp.346 - 349-
dc.citation.titleNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS-
dc.citation.volume216-
dc.citation.startPage346-
dc.citation.endPage349-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000189222100058-
dc.identifier.scopusid2-s2.0-1042277323-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryPhysics, Atomic, Molecular & Chemical-
dc.relation.journalWebOfScienceCategoryPhysics, Nuclear-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusIMPLANTED SIO2-
dc.subject.keywordPlusLUMINESCENCE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordAuthorion-beam-mixing-
dc.subject.keywordAuthorannealing-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorSi nanocrystal-
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