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dc.contributor.authorShon, Y-
dc.contributor.authorKwon, YH-
dc.contributor.authorPark, YS-
dc.contributor.authorYuldashev, SU-
dc.contributor.authorLee, SJ-
dc.contributor.authorPark, CS-
dc.contributor.authorChung, KJ-
dc.contributor.authorYoon, SJ-
dc.contributor.authorKim, HJ-
dc.contributor.authorLee, WC-
dc.contributor.authorFu, DJ-
dc.contributor.authorKang, TW-
dc.contributor.authorFan, XJ-
dc.contributor.authorPark, YJ-
dc.contributor.authorOh, HT-
dc.date.accessioned2024-01-21T07:39:33Z-
dc.date.available2024-01-21T07:39:33Z-
dc.date.created2021-09-02-
dc.date.issued2004-01-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137929-
dc.description.abstractp-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe+ ions. The properties of Fe+ implanted GaN epilayers were investigated by various measurements. The results of photoluminescence measurement show that optical transitions related to Fe appear at 2.5 eV and around 3.1 eV. It was confirmed that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak around 3.1 eV is a conduction band-Fe acceptor transition. Apparent ferromagnetic hysteresis loops measured at 10 and 300 K were observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting above 350 K. (C) 2004 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectMAGNETIC-PROPERTIES-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectSEMICONDUCTORS-
dc.subjectFILMS-
dc.subjectMN-
dc.titleFerromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions-
dc.typeArticle-
dc.identifier.doi10.1063/1.1630364-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.95, no.2, pp.761 - 763-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume95-
dc.citation.number2-
dc.citation.startPage761-
dc.citation.endPage763-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000187659600058-
dc.identifier.scopusid2-s2.0-0742285720-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMAGNETIC-PROPERTIES-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusMN-
dc.subject.keywordAuthordiluted magnetic semiconductors-
dc.subject.keywordAuthorCurie temperature-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthorion implantation-
dc.subject.keywordAuthorphotoluminescence-
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