Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, K | - |
dc.contributor.author | Paek, H | - |
dc.contributor.author | Lee, WI | - |
dc.date.accessioned | 2024-01-21T08:06:35Z | - |
dc.date.available | 2024-01-21T08:06:35Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 2003-10-06 | - |
dc.identifier.issn | 0020-1669 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/138147 | - |
dc.description.abstract | A new pentacoordinate Cu(II) complex, Cu(hfacac)(2)(t-BuNH2) [hfacac = CF3C(O)CHC(O)CF3-, t-BuNH2 = tert-butylamine], has been synthesized and structurally characterized. Interestingly, the structure of a single crystal occurred as square pyramidal with one O atom at the apical position and one N and three O atoms at the basal positions, showing a serious degree of distortion. This contrasts with the square-pyramidal structure of Cu(hfacac)(2)L (L = H2O and pyrazine), which has the L ligand at the axial position. In the Cu(hfacac)(2)(t-BuNH2) complex, the t-BuNH2 ligand is placed at an equatorial position with a lowered angle by 19.9(2)0 from the basal plane. This distortion seems to reduce sigma* influence and steric hindrance and so stabilizes the square-pyramidal geometry. This precursor has a lower melting point and superior stability to air, moisture, and heat than the Cu(hfacac)(2)-(xH(2)O) precursor. The deposition rate of copper oxide film on a Pt layer above 450degreesC was nearly constant with increasing temperature, indicating a mass transport limited reaction. Therefore it would be a useful metal organic chemical vapor deposition precursor for the fabrication of copper oxide film or superconducting materials. Crystal data for Cu(hfacac)(2)(t-BuNH2): 293(2) K, a = 9.6699(4) Angstrom, b = 18.0831(10) Angstrom, c = 12.8864(11) Angstrom, beta = 111.839(5)degrees , monoclinic, space group P2(1)/c, Z = 4. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | MOLECULAR-STRUCTURES | - |
dc.subject | COPPER | - |
dc.subject | COMPLEXES | - |
dc.subject | CRYSTAL | - |
dc.subject | FILMS | - |
dc.subject | CVD | - |
dc.title | Coordination polyhedron and chemical vapor deposition of Cu(hfacac)(2)(t-BuNH2) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/ic034360+ | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | INORGANIC CHEMISTRY, v.42, no.20, pp.6484 - 6488 | - |
dc.citation.title | INORGANIC CHEMISTRY | - |
dc.citation.volume | 42 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 6484 | - |
dc.citation.endPage | 6488 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000185697300040 | - |
dc.identifier.scopusid | 2-s2.0-0141789842 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Inorganic & Nuclear | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLECULAR-STRUCTURES | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | COMPLEXES | - |
dc.subject.keywordPlus | CRYSTAL | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordAuthor | coordination polyhedron | - |
dc.subject.keywordAuthor | Cu precursor | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | deposition rate | - |
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