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dc.contributor.authorWoo, K-
dc.contributor.authorPaek, H-
dc.contributor.authorLee, WI-
dc.date.accessioned2024-01-21T08:06:35Z-
dc.date.available2024-01-21T08:06:35Z-
dc.date.created2021-09-03-
dc.date.issued2003-10-06-
dc.identifier.issn0020-1669-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138147-
dc.description.abstractA new pentacoordinate Cu(II) complex, Cu(hfacac)(2)(t-BuNH2) [hfacac = CF3C(O)CHC(O)CF3-, t-BuNH2 = tert-butylamine], has been synthesized and structurally characterized. Interestingly, the structure of a single crystal occurred as square pyramidal with one O atom at the apical position and one N and three O atoms at the basal positions, showing a serious degree of distortion. This contrasts with the square-pyramidal structure of Cu(hfacac)(2)L (L = H2O and pyrazine), which has the L ligand at the axial position. In the Cu(hfacac)(2)(t-BuNH2) complex, the t-BuNH2 ligand is placed at an equatorial position with a lowered angle by 19.9(2)0 from the basal plane. This distortion seems to reduce sigma* influence and steric hindrance and so stabilizes the square-pyramidal geometry. This precursor has a lower melting point and superior stability to air, moisture, and heat than the Cu(hfacac)(2)-(xH(2)O) precursor. The deposition rate of copper oxide film on a Pt layer above 450degreesC was nearly constant with increasing temperature, indicating a mass transport limited reaction. Therefore it would be a useful metal organic chemical vapor deposition precursor for the fabrication of copper oxide film or superconducting materials. Crystal data for Cu(hfacac)(2)(t-BuNH2): 293(2) K, a = 9.6699(4) Angstrom, b = 18.0831(10) Angstrom, c = 12.8864(11) Angstrom, beta = 111.839(5)degrees , monoclinic, space group P2(1)/c, Z = 4.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectMOLECULAR-STRUCTURES-
dc.subjectCOPPER-
dc.subjectCOMPLEXES-
dc.subjectCRYSTAL-
dc.subjectFILMS-
dc.subjectCVD-
dc.titleCoordination polyhedron and chemical vapor deposition of Cu(hfacac)(2)(t-BuNH2)-
dc.typeArticle-
dc.identifier.doi10.1021/ic034360+-
dc.description.journalClass1-
dc.identifier.bibliographicCitationINORGANIC CHEMISTRY, v.42, no.20, pp.6484 - 6488-
dc.citation.titleINORGANIC CHEMISTRY-
dc.citation.volume42-
dc.citation.number20-
dc.citation.startPage6484-
dc.citation.endPage6488-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000185697300040-
dc.identifier.scopusid2-s2.0-0141789842-
dc.relation.journalWebOfScienceCategoryChemistry, Inorganic & Nuclear-
dc.relation.journalResearchAreaChemistry-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-STRUCTURES-
dc.subject.keywordPlusCOPPER-
dc.subject.keywordPlusCOMPLEXES-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusCVD-
dc.subject.keywordAuthorcoordination polyhedron-
dc.subject.keywordAuthorCu precursor-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthordeposition rate-
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