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dc.contributor.author장재원-
dc.contributor.author김훈-
dc.contributor.author신경식-
dc.contributor.author김재경-
dc.contributor.author주병권-
dc.date.accessioned2024-01-21T09:06:33Z-
dc.date.available2024-01-21T09:06:33Z-
dc.date.created2022-01-10-
dc.date.issued2003-04-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138681-
dc.titleSingle crystal silicon thin film transistor using SOI wafer for the switching device of top emission type AMOLEDs.-
dc.title.alternativeSOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전기전자재료학회논문지 = Journal of the Korean Institute of Electrical and Electronic Material Eng, v.v. 16, no.no. 4, pp.292 - 297-
dc.citation.title전기전자재료학회논문지 = Journal of the Korean Institute of Electrical and Electronic Material Eng-
dc.citation.volumev. 16-
dc.citation.numberno. 4-
dc.citation.startPage292-
dc.citation.endPage297-
dc.subject.keywordAuthorSOI wafer-
dc.subject.keywordAuthorAMOLEDs-
dc.subject.keywordAuthorSingle crystal silicon thin film transistor-
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KIST Article > 2003
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