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dc.contributor.authorLee, JH-
dc.contributor.authorLee, KI-
dc.contributor.authorLee, WL-
dc.contributor.authorShin, KH-
dc.contributor.authorLee, JS-
dc.contributor.authorRhie, K-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T10:38:24Z-
dc.date.available2024-01-21T10:38:24Z-
dc.date.created2021-09-05-
dc.date.issued2002-05-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/139532-
dc.description.abstractThe temperature dependence of tunneling magnetoresistance (TMR) is studied for spin valve type double-barrier tunnel junctions. Normalized TMR values for double-barrier tunnel junctions (DBTJs) and single-barrier junctions (SBTJs) are plotted as functions of temperature and it is found that the DBTJ shows stronger temperature dependence of TMR than the SBTJ. The strong temperature dependence of TMR for the DBTJ is explained in terms of temperature dependence of the spin polarization of the middle magnetic layer and decrease of the spin coherence length with increasing temperature. (C) 2002 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectVOLTAGE-
dc.titleTemperature dependence of tunneling magnetoresistance: Double-barrier versus single-barrier junctions-
dc.typeArticle-
dc.identifier.doi10.1063/1.1452232-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7956 - 7958-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume91-
dc.citation.number10-
dc.citation.startPage7956-
dc.citation.endPage7958-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000175576400044-
dc.identifier.scopusid2-s2.0-0037094936-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordAuthortunneling magnetoresistance-
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KIST Article > 2002
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