Investigation of noise sources in platinum silicide Schottky barrier diodes

Abstract

Low-frequency noise measurements have been carried out in platinum silicide Schottky diodes on n-type silicon in the forward conduction regime and with the forward current I-F as a parameter. The power spectral density of the current fluctuations shows a 1/f behavior and is proportional to I-F(beta) (with 1 < &beta; &LE; 2). The experimental noise data have been successfully explained by an existing model of the random walk of electrons via the interface states, modified by taking into account the Schottky barrier inhomogeneity across the interface. (C) 2002 American Institute of Physics.