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dc.contributor.authorLee, JH-
dc.contributor.authorChang, IW-
dc.contributor.authorByun, SJ-
dc.contributor.authorRhie, K-
dc.contributor.authorShin, KH-
dc.contributor.authorLee, KI-
dc.contributor.authorHa, JG-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T11:08:56Z-
dc.date.available2024-01-21T11:08:56Z-
dc.date.created2021-09-05-
dc.date.issued2002-02-
dc.identifier.issn0304-8853-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/139816-
dc.description.abstractThe temperature dependence of the tunneling magnetoresistance (TMR) for magnetic tunneling junctions is investigated experimentally before and after the sample is annealed. As grown, the TMR is observed to increase with temperature from 80 to 160 K. A modified Julliere model in conjunction with a spin-dependent two-step tunneling is suggested to describe this temperature dependence. (C) 2002 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.titleTemperature dependence of the tunneling magnetoresistance for tunnel junctions-
dc.typeArticle-
dc.identifier.doi10.1016/S0304-8853(01)00768-5-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.149 - 151-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume240-
dc.citation.number1-3-
dc.citation.startPage149-
dc.citation.endPage151-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000175813900041-
dc.identifier.scopusid2-s2.0-0036465073-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthormagnetoresistance-
dc.subject.keywordAuthorthin films-
dc.subject.keywordAuthorTMR-
dc.subject.keywordAuthorMTJ-
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