AlN piezoelectric materials for wireless communication thin film components

Abstract

A Bragg reflector type FBAR using AIN piezoelectric with quarter wavelength thickness has been fabricated, where the Bragg reflector was composed of W-SiO2 pairs. By numerical simulation, considering actual acoustic losses of each layer, an analysis of the frequency response of the resonator has been made and this could be explained using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant (K-eff(2)) and the Quality factor (Q(s)), figures of merit of the resonator, were about 1.1% and 307, respectively.