DSpace at KIST: 다음극 직류전원플라즈마 화학 증착법에 의해 합성된 자유막 다이아몬드 웨이퍼의 특성

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DC Field	Value	Language
dc.contributor.author	이재갑	-
dc.contributor.author	박종완	-
dc.date.accessioned	2024-01-21T11:35:56Z	-
dc.date.available	2024-01-21T11:35:56Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2001-11	-
dc.identifier.issn	1225-8822	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/140033	-
dc.language	Korean	-
dc.publisher	한국진공학회	-
dc.title	다음극 직류전원플라즈마 화학 증착법에 의해 합성된 자유막 다이아몬드 웨이퍼의 특성	-
dc.title.alternative	Properties of a free-standing diamond wafer depoisted by the multi-cathode direct current plasma assisted CVD method	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국진공학회지, v.10, no.3, pp.356 - 360	-
dc.citation.title	한국진공학회지	-
dc.citation.volume	10	-
dc.citation.number	3	-
dc.citation.startPage	356	-
dc.citation.endPage	360	-
dc.description.isOpenAccess	N	-
dc.description.journalRegisteredClass	other	-
dc.subject.keywordAuthor	CVD diamond	-

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