DSpace at KIST: Formation mechanism of intermediate phase in Ba(Mg ₁ / ₃ Ta ₂ / ₃ )O ₃ microwave dielectrics

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DC Field	Value	Language
dc.contributor.author	Yonghan Fang	-
dc.contributor.author	오영제	-
dc.date.accessioned	2024-01-21T11:36:42Z	-
dc.date.available	2024-01-21T11:36:42Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2001-11	-
dc.identifier.issn	1229-7801	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/140047	-
dc.publisher	한국세라믹학회	-
dc.title	Formation mechanism of intermediate phase in Ba(Mg ₁ / ₃ Ta ₂ / ₃ )O ₃ microwave dielectrics	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국세라믹학회지 = Journal of the Korean Ceramic Society, v.38, no.10, pp.881 - 885	-
dc.citation.title	한국세라믹학회지 = Journal of the Korean Ceramic Society	-
dc.citation.volume	38	-
dc.citation.number	10	-
dc.citation.startPage	881	-
dc.citation.endPage	885	-
dc.description.journalRegisteredClass	kci	-
dc.subject.keywordAuthor	kinetics	-

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