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dc.contributor.authorYonghan Fang-
dc.contributor.author오영제-
dc.date.accessioned2024-01-21T11:36:42Z-
dc.date.available2024-01-21T11:36:42Z-
dc.date.created2022-01-10-
dc.date.issued2001-11-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140047-
dc.publisher한국세라믹학회-
dc.titleFormation mechanism of intermediate phase in Ba(Mg ₁ / ₃ Ta ₂ / ₃ )O ₃ microwave dielectrics-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국세라믹학회지 = Journal of the Korean Ceramic Society, v.38, no.10, pp.881 - 885-
dc.citation.title한국세라믹학회지 = Journal of the Korean Ceramic Society-
dc.citation.volume38-
dc.citation.number10-
dc.citation.startPage881-
dc.citation.endPage885-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorkinetics-
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KIST Article > 2001
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