Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Abstract

PZT films were sputter-deposited from a target containing 50 excess PbO on Pt/Ti/SiO2/Si substrate at 550 degreesC. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550degreesC) using a target containing 10 % excess PbO.