DSpace at KISTKIST Article2001

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dc.contributor.author김종채-
dc.contributor.authorYeong-Cheol Kim-
dc.contributor.author김병국-
dc.date.accessioned2024-01-21T11:41:21Z-
dc.date.available2024-01-21T11:41:21Z-
dc.date.created2022-01-10-
dc.date.issued2001-10-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140129-
dc.languageEnglish-
dc.publisher한국세라믹학회-
dc.titleEffect of dopants on cobalt silicidation behavior at metal-oxide-semiconductor field-effect transistor sidewall spacer edge-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국세라믹학회지, v.38, no.10, pp.871 - 875-
dc.citation.title한국세라믹학회지-
dc.citation.volume38-
dc.citation.number10-
dc.citation.startPage871-
dc.citation.endPage875-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorcobalt silicidation-
dc.subject.keywordAuthorvoid-
dc.subject.keywordAuthorlightly doped drain (LDD)-
dc.subject.keywordAuthorMOSFET-
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KIST Article > 2001
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