DSpace at KISTKIST Article2001

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dc.contributor.authorYeong-Cheol Kim-
dc.contributor.author김기영-
dc.contributor.author김병국-
dc.date.accessioned2024-01-21T11:44:39Z-
dc.date.available2024-01-21T11:44:39Z-
dc.date.created2022-01-10-
dc.date.issued2001-09-
dc.identifier.issn1225-1429-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140188-
dc.languageKorean-
dc.publisher한국결정성장학회-
dc.title코발트 실리사이드에 의한 게이트 측벽 기공 형성에 대한 고찰-
dc.title.alternativeA consideration of void formation mechanism at gate edge induced by cobalt silicidation-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국결정성장학회지, v.12, no.3, pp.166 - 170-
dc.citation.title한국결정성장학회지-
dc.citation.volume12-
dc.citation.number3-
dc.citation.startPage166-
dc.citation.endPage170-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthor코발트 실리사이드-
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KIST Article > 2001
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