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dc.contributor.author김진상-
dc.contributor.author서상희-
dc.date.accessioned2024-01-21T11:44:59Z-
dc.date.available2024-01-21T11:44:59Z-
dc.date.created2022-01-10-
dc.date.issued2001-09-
dc.identifier.issn1229-8700-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140194-
dc.publisher한국결정학회-
dc.titleCharacteristics of MOVPE grown HgCdTe on GaAs and CdZnTe substrates-
dc.title.alternativeGaAs 및 CdZnTe 기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 특성-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation한국결정학회지 = Korean Journal of Crystallography, v.12, no.3, pp.171 - 176-
dc.citation.title한국결정학회지 = Korean Journal of Crystallography-
dc.citation.volume12-
dc.citation.number3-
dc.citation.startPage171-
dc.citation.endPage176-
dc.subject.keywordAuthor적외선 검출기-
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KIST Article > 2001
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