DSpace at KISTKIST Article2001

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dc.contributor.author조용석-
dc.contributor.author고의관-
dc.contributor.author박용주-
dc.contributor.author김은규-
dc.contributor.author황성민-
dc.contributor.author임시종-
dc.contributor.author변동진-
dc.date.accessioned2024-01-21T12:04:14Z-
dc.date.available2024-01-21T12:04:14Z-
dc.date.created2022-01-10-
dc.date.issued2001-08-
dc.identifier.issn1225-0562-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140278-
dc.titleEffects of GaN buffer layer thickness on characteristics of GaN epilayer-
dc.title.alternativeGaN 완충층 두께가 GaN 에피층의 특성에 미치는 영향-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국재료학회지 = Korean Journal of Materials Research, v.11, no.7, pp.575 - 579-
dc.citation.title한국재료학회지 = Korean Journal of Materials Research-
dc.citation.volume11-
dc.citation.number7-
dc.citation.startPage575-
dc.citation.endPage579-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthorGaN-
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KIST Article > 2001
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