Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

Abstract

The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si. (C) 2001 Elsevier Science B.V. All rights reserved.