Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2

Abstract

We have used ion-beam mixing to form Si nanocrystals in SiO2 and SiO2/Si multilayers. and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 degreesC for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that ot a Si-implanted SiO2 film. Photon and electron-excited Si L-2.3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO2 matrix after ion-beam mixing and heat treatment. It is found that Si L-2.3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO2 films lead to noticeable changes in the spectroscopic fine structure.