Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JK | - |
dc.contributor.author | Lee, CS | - |
dc.contributor.author | Lee, KR | - |
dc.contributor.author | Eun, KY | - |
dc.date.accessioned | 2024-01-21T13:01:11Z | - |
dc.date.available | 2024-01-21T13:01:11Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2001-01-29 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/140768 | - |
dc.description.abstract | Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1 +/-0.5 cm(-1)/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp(2) bond content shifts the G-peak position to higher frequency. (C) 2001 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | ARC | - |
dc.title | Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.1343840 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.78, no.5, pp.631 - 633 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 78 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 631 | - |
dc.citation.endPage | 633 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000166737500024 | - |
dc.identifier.scopusid | 2-s2.0-0001462280 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | ARC | - |
dc.subject.keywordAuthor | Ta-C | - |
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