DSpace at KIST: Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.

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DC Field	Value	Language
dc.contributor.author	김현정	-
dc.contributor.author	김긍호	-
dc.date.accessioned	2024-01-21T13:02:24Z	-
dc.date.available	2024-01-21T13:02:24Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2001-01	-
dc.identifier.issn	1225-6773	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/140790	-
dc.publisher	한국전자현미경학회	-
dc.title	Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.	-
dc.title.alternative	활성화 이온빔 처리된 sapphire 기판 위에 성장시킨 MOCVD-GaN 박막의 격자변형량 측정	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국전자현미경학회지, v.30, no.4, pp.337 - 345	-
dc.citation.title	한국전자현미경학회지	-
dc.citation.volume	30	-
dc.citation.number	4	-
dc.citation.startPage	337	-
dc.citation.endPage	345	-
dc.subject.keywordAuthor	GaN	-
dc.subject.keywordAuthor	HOLZ	-
dc.subject.keywordAuthor	reactive ion beam	-
dc.subject.keywordAuthor	sapphire substrate	-
dc.subject.keywordAuthor	lattice strain	-

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