Self-assembled InAs quantum dots on GaAs (100) and (311)A substrates

Abstract

We I,resent the optical and the structural properties of self-assembled InAs/GaAs quantum dot (QD) structures grown oil GaAs (100) and (311)A substrates by using molecular beam epitaxy. The photoluminescence (PL) measurements as: a function of the temperature and the excitation power density were performed in a closed-cycle refrigerator in the temperature range from 17 to 280 K. The redshifts of the luminescence emissions from the QDs and the Quantum Wells (QW) followed the Varshni equation. The temperature behaviors of the luminescence for the (100) and the (311)A samples indicated a change in the shapes and thermal quenching activation energies of the QDs.