Characteristics of GaN films grown on the stress-imposed Si(111)

Abstract

Characteristics of the GaN film affected by the strain field existing in the implanted Si(lll) substrate have been investigated. The Si(lll) substrates were implanted with N+ prior to the film growth. GaN epitaxial films with AlN-buffered and GaN/AlN-buffered layers, respectively, were grown on implanted-substrates by metalorganic chemical vapor deposition. From the Raman scattering and X-ray pole figure measurements, characteristics of GaN films, especially, with AlN-buffered layer were highly affected by the stress-imposed substrates and the better crystalline quality was obtained by employing a highly dosed substrate. (C) 2000 Elsevier Science S.A. All rights reserved.