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dc.contributor.authorKim, HK-
dc.contributor.authorHan, SH-
dc.contributor.authorSeong, TY-
dc.contributor.authorChoi, WK-
dc.date.accessioned2024-01-21T13:34:06Z-
dc.date.available2024-01-21T13:34:06Z-
dc.date.created2021-09-04-
dc.date.issued2000-09-11-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141097-
dc.description.abstractWe report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n(d)=2x10(17) cm(-3)) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2x10(-4) Omega cm(2) when annealed at 300 degrees C for 1 min in a N-2 atmosphere. (C) 2000 American Institute of Physics. [S0003-6951(00)00537-4].-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectFILMS-
dc.titleLow-resistance Ti/Au ohmic contacts to Al-doped ZnO layers-
dc.typeArticle-
dc.identifier.doi10.1063/1.1308527-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.77, no.11, pp.1647 - 1649-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume77-
dc.citation.number11-
dc.citation.startPage1647-
dc.citation.endPage1649-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000089170700027-
dc.identifier.scopusid2-s2.0-0000082345-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorohmic contact-
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