DSpace at KIST: Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure

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DC Field	Value	Language
dc.contributor.author	이희택	-
dc.contributor.author	최원준	-
dc.contributor.author	우덕하	-
dc.contributor.author	김선호	-
dc.contributor.author	조재원	-
dc.date.accessioned	2024-01-21T13:35:50Z	-
dc.date.available	2024-01-21T13:35:50Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2000-09	-
dc.identifier.issn	0374-4914	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/141125	-
dc.publisher	한국물리학회	-
dc.title	Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure	-
dc.title.alternative	InGaAs/InGaAsP 단일 양자우물구조의 impurity free vacancy disordering에서 유전체-반도체 덮개층 조합 효과	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	새물리, v.41, no.3, pp.193 - 198	-
dc.citation.title	새물리	-
dc.citation.volume	41	-
dc.citation.number	3	-
dc.citation.startPage	193	-
dc.citation.endPage	198	-
dc.subject.keywordAuthor	quantum well intermixing	-

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