Domain wall trapping in controlled submicron ferromagnetic elements

Authors
Hirohata, AXu, YBYao, CCLeung, HTLee, WYGardiner, SMHasko, DGBland, JACHolmes, SN
Issue Date
2000-05-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.87, no.9, pp.4727 - 4729
Abstract
The domain configuration in permalloy wires (30 nm thick, 10 mu m wide, and 205 mu m long) with a wide size range of a narrow central bridge (5 mu m long and w mu m wide; 0.5 less than or equal to w less than or equal to 10 mu m) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. (C) 2000 American Institute of Physics. [S0021-8979(00)35408-1].
Keywords
MAGNETIC FORCE MICROSCOPY; RESISTIVITY; WIRES; MAGNETIC FORCE MICROSCOPY; RESISTIVITY; WIRES; domain wall; submicron ferromagnetic elements; switching field
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/141397
DOI
10.1063/1.373140
Appears in Collections:
KIST Article > 2000
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