SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor

Abstract

We have investigated the growth of Bi oxide, Sr-Ta oxide, and SrBi2 Ta-2 O-9 (SBT) thin films on Pt/SiO2/Si substrates by the MOCVD technique using a novel double metal alkoxide precursor, strontium and tantalum ethoxide (Sr[Ta(OEt)(6)](2)), and triphenylbismuth [BI(C6H5)(3)]. SBT films having ternary compositions were grown over a 500-700 degrees C temperature range with polycrystalline films being attained after annealing at 800 degrees C in oxygen. beta-Bi2O3 phase was obtained after annealing as-grown films at 800 degrees C in oxygen. Sr-Ta oxide films grown at 500 degrees C substrate temperature had SrTa2O6 phase, which may be appropriate for growing SET films having perovskite layer (SrTa2O7). Details of obtaining the necessary flow ratios of the two precursors are given along with SEM micrographs of the polycrystalline SET him. (C) 2000 Elsevier Science B.V. All rights reserved.