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dc.contributor.authorShin, DW-
dc.contributor.authorYou, YH-
dc.contributor.authorChoi, DJ-
dc.contributor.authorKim, GH-
dc.date.accessioned2024-01-21T15:33:24Z-
dc.date.available2024-01-21T15:33:24Z-
dc.date.created2022-01-11-
dc.date.issued1999-05-15-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142185-
dc.languageEnglish-
dc.publisherKLUWER ACADEMIC PUBL-
dc.subjectSTACKING-FAULTS-
dc.subjectGROWTH-
dc.titleThe characteristics of interfacial strains developed in silicon by wet O-2 oxidation-
dc.typeArticle-
dc.identifier.doi10.1023/A:1006664429348-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.18, no.10, pp.755 - 757-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume18-
dc.citation.number10-
dc.citation.startPage755-
dc.citation.endPage757-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000081237100003-
dc.identifier.scopusid2-s2.0-0032676299-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusSTACKING-FAULTS-
dc.subject.keywordPlusGROWTH-
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