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dc.contributor.authorKim, DM-
dc.contributor.authorLim, GM-
dc.contributor.authorKim, HJ-
dc.date.accessioned2024-01-21T15:35:26Z-
dc.date.available2024-01-21T15:35:26Z-
dc.date.created2021-09-05-
dc.date.issued1999-05-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142220-
dc.description.abstractOploelectronic properties of an n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87As pseudomorphic high electron mobility transistor (PHEMT) have been characterized as a function of the drain voltage, the gate voltage and an optical stimulation with a wavelength lambda = 830 nm. Physical mechanisms involved in the variation of optoelectronic performance are discussed and analytical models are provided for strong non-linear photoresponsivity. Parallel conduction caused by free electrons in the N-type Al0.3Ga0.7As donor layers, which is qualitatively explained and analytically modeled, is believed to be one of the most dominant processes in the non-linear optoelectronic response of PHEMTs under high optical stimulation. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectHEMTS-
dc.subjectPERFORMANCE-
dc.subjectMESFET-
dc.subjectMODFET-
dc.subjectMODEL-
dc.titleParallel conduction and non-linear optoelectronic response of an n-channel pseudomorphic high electron mobility transistor-
dc.typeArticle-
dc.identifier.doi10.1016/S0038-1101(99)00047-7-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.43, no.5, pp.943 - 951-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume43-
dc.citation.number5-
dc.citation.startPage943-
dc.citation.endPage951-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000080964100011-
dc.identifier.scopusid2-s2.0-0032627366-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusHEMTS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMESFET-
dc.subject.keywordPlusMODFET-
dc.subject.keywordPlusMODEL-
dc.subject.keywordAuthorHEMT-
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