Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Cho, WS | - |
dc.contributor.author | Oh, YS | - |
dc.contributor.author | Kim, CS | - |
dc.contributor.author | Osada, M | - |
dc.contributor.author | Kakihana, M | - |
dc.contributor.author | Lim, DS | - |
dc.contributor.author | Cheong, DS | - |
dc.date.accessioned | 2024-01-21T15:41:34Z | - |
dc.date.available | 2024-01-21T15:41:34Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 1999-03-30 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/142328 | - |
dc.description.abstract | We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. The formed Si3N4/SiC nanocomposites have been studied using Raman scattering and X-ray photoelectron spectroscopy (WS). The Raman scattering measurements showed that the formation of SiC started at 1200 degrees C and that the main phase was 3C-SiC, The XPS results suggested that the SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 with free carbon obtained by pyrolysis of polymer. The XPS results also indicated that residual carbon reacted with N-2 to form CNx, which remained as an impurity phase in the final product. (C) 1999 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | SILICON-CARBIDE | - |
dc.subject | FILMS | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | FABRICATION | - |
dc.subject | TEMPERATURE | - |
dc.subject | SURFACES | - |
dc.title | Characterization of Si3N4/SiC nanocomposite by Raman scattering and XPS | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0925-8388(99)00007-9 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.285, no.1-2, pp.255 - 259 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 285 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 255 | - |
dc.citation.endPage | 259 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000079733300049 | - |
dc.identifier.scopusid | 2-s2.0-0033099132 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordAuthor | Si3N4/SiC | - |
dc.subject.keywordAuthor | nanocomposite | - |
dc.subject.keywordAuthor | Raman scattering | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
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