Effect of interfacial carbide layer on the Raman spectra in chemical-vapor deposited diamond films

Authors
Kim, JGYu, JLee, JC
Issue Date
1999-02
Publisher
JAPAN J APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.2A, pp.777 - 780
Abstract
Diamond films were deposited on the p-Si (100) substrates by hot filament chemical vapor deposition (HFCVD). Then: the Raman spectra of the diamond films with the substrate removed and with a carbon layer deposited on the back of the film were compared. We also investigated the characteristics of the spectra along the direction of the film thickness. The results showed that the Raman spectra were affected not only by the properties of the diamond films but also by the interfacial silicon carbide layer, due to the high optical transmittance of diamond. The residual stresses in the film showed a nonuniform distribution along the film thickness. However, the residual stress on the top surface of the film almost reflected the average value for the total film thickness.
Keywords
NUCLEATION; STRESS; SPECTROSCOPY; GROWTH; SIZE; CVD; NUCLEATION; STRESS; SPECTROSCOPY; GROWTH; SIZE; CVD; diamond film; Raman spectroscopy; penetration depth; residual stress; silicon carbide
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/142435
DOI
10.1143/JJAP.38.777
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KIST Article > Others
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