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dc.contributor.author송종형-
dc.contributor.author정관욱-
dc.contributor.author김진상-
dc.contributor.author서상희-
dc.contributor.author김인재-
dc.contributor.author김선웅-
dc.contributor.author박만장-
dc.contributor.author박승만-
dc.contributor.author김홍국-
dc.contributor.author김재묵-
dc.date.accessioned2024-01-21T16:15:30Z-
dc.date.available2024-01-21T16:15:30Z-
dc.date.created2022-01-10-
dc.date.issued1998-12-
dc.identifier.issn1013-7009-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142676-
dc.titleIn-situ Doped Multilayer MOVPE HgCdTe Growth and Photodiode Fabrication-
dc.title.alternativeMOVPE 방법에 의한 in-situ 도핑된 다층구조 HgCdTe 성장과 다이오드 제작-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation응용물리, v.11, pp.S134 - S138-
dc.citation.title응용물리-
dc.citation.volume11-
dc.citation.startPageS134-
dc.citation.endPageS138-
dc.subject.keywordAuthorMOVPE-
dc.subject.keywordAuthorHgCdTe-
dc.subject.keywordAuthorIR detector-
dc.subject.keywordAuthorphotodiode-
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