DSpace at KIST: Properties of wafer-fused In0.2Ga0.8As/GaAs and InP/GaAs heterointerfaces

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DC Field	Value	Language
dc.contributor.author	최창학	-
dc.contributor.author	황성민	-
dc.contributor.author	김용	-
dc.contributor.author	김은규	-
dc.contributor.author	민석기	-
dc.contributor.author	남산	-
dc.contributor.author	변재동	-
dc.date.accessioned	2024-01-21T17:07:45Z	-
dc.date.available	2024-01-21T17:07:45Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1998-05	-
dc.identifier.issn	1013-7009	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143093	-
dc.title	Properties of wafer-fused In0.2Ga0.8As/GaAs and InP/GaAs heterointerfaces	-
dc.title.alternative	기판 퓨전을 이용한 InP/GaAs, In0.2Ga0.8As/GaAs 이종 접합에 관한 연구	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	응용물리, v.11, no.3, pp.353 - 358	-
dc.citation.title	응용물리	-
dc.citation.volume	11	-
dc.citation.number	3	-
dc.citation.startPage	353	-
dc.citation.endPage	358	-
dc.subject.keywordAuthor	wafer fusion	-

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