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dc.contributor.authorGho, SJ-
dc.contributor.authorPark, SH-
dc.contributor.authorLim, H-
dc.contributor.authorChoe, BD-
dc.contributor.authorLee, CW-
dc.contributor.authorKo, MK-
dc.contributor.authorKim, YT-
dc.date.accessioned2024-01-21T17:46:06Z-
dc.date.available2024-01-21T17:46:06Z-
dc.date.created2021-09-01-
dc.date.issued1997-11-15-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143507-
dc.description.abstractThe co-doping effects of Mn on AlGaAs:Si diodes grown by a single-step liquid phase epitaxy (LPE) technique are investigated. Their current-voltage (I-V) characteristics are studied as a function of Mn and Al compositions. It is found that the breakdown voltage and the voltage drop increase with the concentrations of Mn and Al. These results are well explained by the increase of the thickness of the P-degrees-region and the decrease of free hole concentration in its region.-
dc.languageEnglish-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.titleNegative resistance of AlGaAs diodes Co-doped with Si and Mn-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.36.L1481-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.36, no.11B, pp.L1481 - L1482-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.citation.volume36-
dc.citation.number11B-
dc.citation.startPageL1481-
dc.citation.endPageL1482-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1997YJ04500002-
dc.identifier.scopusid2-s2.0-5944241962-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorAlGaAs diodes-
dc.subject.keywordAuthorsingle-step LPE-
dc.subject.keywordAuthornegative resistance-
dc.subject.keywordAuthorP degrees-region-
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