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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김은규-
dc.contributor.author조신호-
dc.contributor.author이달진-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-21T17:46:33Z-
dc.date.available2024-01-21T17:46:33Z-
dc.date.created2022-01-10-
dc.date.issued1997-11-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143514-
dc.title유기금속 화학기상 증착법으로 성장시킨 탄소 도핑된 GaAs 에피층의 띠간격 축소 효과-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리 ., v.10, no.6, pp.558 - 564-
dc.citation.title응용물리 .-
dc.citation.volume10-
dc.citation.number6-
dc.citation.startPage558-
dc.citation.endPage564-
dc.subject.keywordAuthorMOCVD-
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