DSpace at KIST: Effect of substrate surface roughness modified by nitridation on GaN growth

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DC Field	Value	Language
dc.contributor.author	정재식	-
dc.contributor.author	변동진	-
dc.contributor.author	김병호	-
dc.contributor.author	이재인	-
dc.contributor.author	유지범	-
dc.contributor.author	금동화	-
dc.date.accessioned	2024-01-21T17:46:46Z	-
dc.date.available	2024-01-21T17:46:46Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1997-11	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143518	-
dc.title	Effect of substrate surface roughness modified by nitridation on GaN growth	-
dc.title.alternative	질화처리에 의한 기판 평면 평활도의 변화가 GaN 성장에 미치는 영향	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	한국재료학회지 = Korean Journal of Materials Research, v.7, no.11, pp.986 - 990	-
dc.citation.title	한국재료학회지 = Korean Journal of Materials Research	-
dc.citation.volume	7	-
dc.citation.number	11	-
dc.citation.startPage	986	-
dc.citation.endPage	990	-
dc.subject.keywordAuthor	GaN film	-

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