Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, HS | - |
dc.contributor.author | Ha, HP | - |
dc.contributor.author | Hyun, DB | - |
dc.contributor.author | Shim, JD | - |
dc.contributor.author | Lee, DH | - |
dc.date.accessioned | 2024-01-21T18:35:24Z | - |
dc.date.available | 2024-01-21T18:35:24Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 1997-04 | - |
dc.identifier.issn | 0022-3697 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/143883 | - |
dc.description.abstract | The Seebeck coefficient and electrical conductivity of the 25% Bi2Te3 - 75 % Sb2Te3 solid solution prepared by hot-pressing method were measured and the effects of particle size, oxidation, hot-pressing temperature and time on the Seebeck coefficient of the polycrystalline solid solution were examined in detail. It has been found that the mechanical deformation during pulverization or pressing processes is very important in controlling the Seebeck cofficient. The role of the anion vacancies formed by the mechanical deformation as well as the change of the antistructure defect concentration were discussed. By optimizing particle size and hot-pressing temperature, the figure of merit about 2.9 x 10(-3) K-1 could be obtained for the p-type polycrystalline 25% Bi2Te3 - 75% Sb2Te3 solid solutions without excess Te addition. (C) 1997 Elsevier Science Ltd. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Thermoelectric properties of 25%Bi2Te3-75%Sb2Te3 solid solution prepared by hot-pressing method | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0022-3697(96)00049-2 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.58, no.4, pp.671 - 678 | - |
dc.citation.title | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | - |
dc.citation.volume | 58 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 671 | - |
dc.citation.endPage | 678 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | A1997WR65200017 | - |
dc.identifier.scopusid | 2-s2.0-0031121431 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | BI2TE3-SB2TE3 | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | chalcogenides | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | electrical properties | - |
dc.subject.keywordAuthor | mechanical properties | - |
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