Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

Abstract

A novel impurity-free interdiffusion technique utilizing pulsed anodization and subsequent rapid thermal annealing at temperatures near 900 degrees C was reported. Enhanced interdiffusion was observed in the presence of an anodized GaAs capping layer in GaAs/AlGaAs quantum well structures. Transmission electron microscopy studies show evidence of interdiffusion. Photoluminescence spectra from interdiffused samples show large blue shift and no significant linewidth broadening. possible mechanism of interdiffusion was discussed. (C) 1997 American Institute of Physics.