Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates

Abstract

Lateral growth rate of GaAs is remarkably increased with supplying CBr4, which has been utilized as a p-type dopant source for carbon doped GaAs epilayers during metalorganic chemical vapor deposition growth. The lateral growth rate can be represented as a linear function of the CBr4 flow rate, while the GaAs vertical growth rate is relatively insensitive to the CBr, flow rate. The maximum ratio of the lateral to vertical growth rate by CBr4 is about 29. With increasing the growth temperature, the lateral growth rate increases, but it decreases at a more elevated growth temperature than 700 degrees C. These results are also compared to the previous results obtained by CCl4. In all cases the lateral growth rate increments by CBr4 are larger than those by CCl4. (C) 1996 American Institute of Physics.