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Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures

Other Titles

MOCVD법에 의한 p-Si(100) 기판위의 TiO2 유전체박막 성장 및 Al/TiO2/p-Si 구조의 전기적 특성

Authors

염상섭; 김은규; 민석기; 한영기; 임종수; 손맹호

Issue Date

1996-07

Citation

응용물리, v.9, no.4, pp.495 - 499

Keywords

thin films; MOCVD; Si substrate; Al/TiO2 direct film; MIS structure

ISSN

1013-7009

URI

https://pubs.kist.re.kr/handle/201004/144398

Appears in Collections:

KIST Article > Others

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