DSpace at KIST: CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질

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DC Field	Value	Language
dc.contributor.author	손창식	-
dc.contributor.author	김성일	-
dc.contributor.author	민병돈	-
dc.contributor.author	김은규	-
dc.contributor.author	민석기	-
dc.contributor.author	최인훈	-
dc.date.accessioned	2024-01-21T19:33:05Z	-
dc.date.available	2024-01-21T19:33:05Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-07	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144400	-
dc.title	CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.4, pp.529 - 534	-
dc.citation.title	응용물리 = Ungyong Mulli (The Korean physical society)	-
dc.citation.volume	9	-
dc.citation.number	4	-
dc.citation.startPage	529	-
dc.citation.endPage	534	-
dc.subject.keywordAuthor	CBr4	-
dc.subject.keywordAuthor	2 ˚ off (100) GaAs	-
dc.subject.keywordAuthor	carbon doping	-
dc.subject.keywordAuthor	MOCVD	-

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