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dc.contributor.authorSong, MH-
dc.contributor.authorLee, YH-
dc.contributor.authorHahn, TS-
dc.contributor.authorOh, MH-
dc.contributor.authorYoon, KH-
dc.date.accessioned2024-01-21T19:37:21Z-
dc.date.available2024-01-21T19:37:21Z-
dc.date.created2022-01-10-
dc.date.issued1996-04-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144472-
dc.description.abstractA new deposition method used to prepare BaTiO3 thin films resulted in multilayered structure with higher dielectric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decreased the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a multilayered amorphous/microcrystalline/polycrystalline structure, the nature of which was confirmed by scanning electron microscopy and index of refraction measurement. Well-defined ferroelectric hysteresis loops were observed as well with insignificant leakage current effects. (C) 1996 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFABRICATION-
dc.subjectDEPOSITION-
dc.subjectCAPACITORS-
dc.titleEffects of a new stacking method on characteristics of multilayered BaTiO3 thin film-
dc.typeArticle-
dc.identifier.doi10.1063/1.361208-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.79, no.7, pp.3744 - 3748-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume79-
dc.citation.number7-
dc.citation.startPage3744-
dc.citation.endPage3748-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1996UC07300061-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusCAPACITORS-
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