Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 손창식 | - |
| dc.contributor.author | 김성일 | - |
| dc.contributor.author | 김태근 | - |
| dc.contributor.author | 김용 | - |
| dc.contributor.author | 김무성 | - |
| dc.contributor.author | 민석기 | - |
| dc.date.accessioned | 2024-01-21T19:43:20Z | - |
| dc.date.available | 2024-01-21T19:43:20Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1996-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/144575 | - |
| dc.title | Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs. | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | Solid state communications, v.v. 98, no.no. 5, pp.475 - 478 | - |
| dc.citation.title | Solid state communications | - |
| dc.citation.volume | v. 98 | - |
| dc.citation.number | no. 5 | - |
| dc.citation.startPage | 475 | - |
| dc.citation.endPage | 478 | - |
| dc.subject.keywordAuthor | RTA | - |
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