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dc.contributor.author손창식-
dc.contributor.author진현철-
dc.contributor.author한철구-
dc.contributor.author이정훈-
dc.contributor.author강준모-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.contributor.author김창수-
dc.date.accessioned2024-01-21T19:44:44Z-
dc.date.available2024-01-21T19:44:44Z-
dc.date.created2022-01-10-
dc.date.issued1996-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144599-
dc.titleGaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.1, pp.67 - 72-
dc.citation.title응용물리 = Ungyong Mulli (The Korean physical society)-
dc.citation.volume9-
dc.citation.number1-
dc.citation.startPage67-
dc.citation.endPage72-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorluttice distortion-
dc.subject.keywordAuthorInGaAs-
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