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dc.contributor.author서상희-
dc.contributor.author문성욱-
dc.contributor.author송종형-
dc.date.accessioned2024-01-21T19:44:48Z-
dc.date.available2024-01-21T19:44:48Z-
dc.date.created2022-01-10-
dc.date.issued1996-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144600-
dc.titleHillock이 없고 전기적 특성이 좋은 (100) HgCdTe/GaAs의 MOVPE 성장-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리 , Ungyong Mulli = The Korean physical society, proc. suppl., v.9, pp.S50 - S53-
dc.citation.title응용물리 , Ungyong Mulli = The Korean physical society, proc. suppl.-
dc.citation.volume9-
dc.citation.startPageS50-
dc.citation.endPageS53-
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