DSpace at KIST: Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.

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DC Field	Value	Language
dc.contributor.author	김성일	-
dc.contributor.author	민석기	-
dc.contributor.author	김은규	-
dc.contributor.author	박영주	-
dc.contributor.author	최원철	-
dc.contributor.author	이상훈	-
dc.contributor.author	손맹호	-
dc.date.accessioned	2024-01-21T20:07:25Z	-
dc.date.available	2024-01-21T20:07:25Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144752	-
dc.title	Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Bulletin of the Korean physical society, v.v. 14, no.no. 2, pp.507 - ?	-
dc.citation.title	Bulletin of the Korean physical society	-
dc.citation.volume	v. 14	-
dc.citation.number	no. 2	-
dc.citation.startPage	507	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	MOCVD	-

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