Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor

Abstract

We have studied the thermal stability of the electrical properties for RuO2 Schottky contact on sulfur passivated n-type GaAs. The sulfur passivation on the surface of the compound semiconductor was done with (NH4)(2)S-x solution under 150 watt light illumination at room temperature, and then RuO2 contacts were fabricated by a DC magnetron sputtering method. By the sulfur passivation on semiconductors the RuO2 Schottky contacts showed the good electrical properties and enhancement of its thermal stability during the thermal annealing up to 550 degrees C for 10 min. From AES(Auger electron spectroscopy) analysis, it was confirmed that the sulfur passivation is responsible for the suppression of an oxidation at interfaces between RuO2 and semiconductors.