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dc.contributor.author김용-
dc.contributor.author최원준-
dc.contributor.author이석-
dc.contributor.author우덕하-
dc.contributor.author김상국-
dc.contributor.author김선호-
dc.contributor.author이정일-
dc.contributor.author강광남-
dc.contributor.author추장희-
dc.contributor.author조규만-
dc.contributor.authorS. K. Yu-
dc.contributor.authorJ. C. Seo-
dc.contributor.authorD. Kim-
dc.date.accessioned2024-01-21T20:16:27Z-
dc.date.available2024-01-21T20:16:27Z-
dc.date.created2022-01-10-
dc.date.issued1995-12-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144904-
dc.titleCarrier lifetimes in dielectric disordered GaAs/AlGaAs multiple quantum well with SiN capping layers.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationApplied physics letters, v.v. 67, no.no. 23, pp.3438 - 3440-
dc.citation.titleApplied physics letters-
dc.citation.volumev. 67-
dc.citation.numberno. 23-
dc.citation.startPage3438-
dc.citation.endPage3440-
dc.subject.keywordAuthorlife time-
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