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dc.contributor.authorCHOI, WJ-
dc.contributor.authorLEE, S-
dc.contributor.authorKIM, Y-
dc.contributor.authorKIM, SK-
dc.contributor.authorLEE, JI-
dc.contributor.authorKANG, KN-
dc.contributor.authorPARK, N-
dc.contributor.authorPARK, HL-
dc.contributor.authorCHO, K-
dc.date.accessioned2024-01-21T20:32:55Z-
dc.date.available2024-01-21T20:32:55Z-
dc.date.created2022-01-10-
dc.date.issued1995-10-15-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144951-
dc.languageEnglish-
dc.publisherCHAPMAN HALL LTD-
dc.subjectGAAS-
dc.subjectFILMS-
dc.titleDIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER-
dc.typeArticle-
dc.identifier.doi10.1007/BF00462206-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.14, no.20, pp.1433 - 1435-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume14-
dc.citation.number20-
dc.citation.startPage1433-
dc.citation.endPage1435-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1995TB53400010-
dc.identifier.scopusid2-s2.0-0029386453-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorquantum well disordering-
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